New Artificial Nanostructures for Infrared Absorption Technologies

Recently, researchers in Bengaluru’s Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), an autonomous institute of the Department of Science and Technology, have demonstrated for the first time infrared light emission and absorption with Gallium nitride (GaN) nanostructures. The development could lend itself to multiple useful applications.

Context

• GaN, a widely used material for blue light emission, is one of the most advanced semiconductors. Though visible and ultraviolet light applications of GaN have already been realized, with LEDs and laser diodes commercially available, utilization of GaN for IR light harvesting or development of GaN-based IR optical elements is lacking.