Silicon Carbide (SiC) in Semiconductors

  • In August 2025, the Centre approved to establish integrated facility of Silicon Carbide (SiC) based Compound Semiconductors in Info Valley, Bhubaneshwar, Odisha.
  • Silicon Carbide is a robust wide-bandgap semiconductor material composed of equal parts of silicon and carbon.
  • It possesses significantly higher thermal conductivity and breakdown voltage compared to traditional silicon-based semiconductor materials.
  • The wide bandgap enables electronic devices to operate at much higher temperatures and frequencies very efficiently.
  • Higher energy efficiency in power conversion substantially reduces the overall size and weight of cooling systems.

Strategic Applications and Policy

  • SiC is essential for advanced power electronics used in electric vehicles, solar inverters, and high-speed ....
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